深圳市兴华盛电子有限公司

特征 Features  与 S9012 配对; Complementary to S9012  大功率耗散 300mW; Power Dissipation of 300mW  高稳定性和可靠性。High Stability and High Reliability 机械数据 Mechanical Data SOT-23 Marking: J3  封装: SOT-23 封装 SOT-23 Small Outline Plastic Package  环氧树脂 UL 易燃等级 Epoxy UL: 94V-0  安装位置: 任意 Mounting Position: Any 极限值和温度特性(TA = 25℃ 除非另有规定) Maximum Ratings & Thermal Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified.) 参数 Parameters 符号 Symbol 数值 Value 单位 Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter -Base Voltage VEBO 5 V Collector Current-Continuous IC 500 mA Collector Power Dissipation PC 300 mW Junction Temperature Tj 150 ℃ Storage Temperature Tstg -55-+150 ℃ Thermal resistance From junction to ambient RθJA 416 ℃/W 电特性 (TA = 25℃ 除非另有规定) Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified). 参数 界限 Limits Parameter 符号 Symbols 测试条件 Test Condition Min Max 单位 Unit Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100uA, IC=0 5 V Collector cut-off current ICEO VCE=20V, IB=0 100 nA Collector cut-off current ICBO VCB=40V, IE=0 100 nA Emitter cut-off current IEBO VEB=5V, IC=0 100 nA hFE(1) VCE=1V, IC=50mA 120 400 DC current gain hFE(2) VCE=1V, IC=500mA 40 Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 0.60 V Base -emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 1.20 V Base -emitter voltage VBE VCB=1V, IC=10mA 0.70 V Transition frequency fT VCE=6V, IC=20mA,f=30MHz 150 MHz Collector output capacitance Cob VCB=6V, IE=0, f=1MHz 8 pF CLASSIFICATION OF hFE(1) RANK L H J RANGE 120-200 200-350 300-400